The objectives and methods of doping

The purpose of alloying

In the manufacture of semiconductor doping is considered an essential technological process (along with the deposition and etching). Its main objective is the correction of the conductivity type and carrier concentrations in the bulk of semiconductor to achieve certain properties (obtain the desired smoothness of the pn-transition). The most common elements for doping silicon is phosphorus P and arsenic As (allow to obtain n-type conductivity) and boron (p-type).

Methods of doping

Today there are three different doping techniques: ion implantation, diffusion and neutron-transmutation doping.

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